PD -9.1668A
IRG4ZC70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
q
q
Surface Mountable
UltraFast CoPack IGBT
C
q
q
q
q
q
UltraFast IGBT optimized for high switching frequencies
n-channel
IGBT co-packaged with HEXFRED鈩?ultrafast,
ultra-soft recovery antiparallel diodes for use in
bridge configurations
Low gate charge
G
Low profile low inductance SMD-10 package
E(k)
Separated control & Power-connections for
easy paralleling
Inherently coplanar pins and tab
Easy solder inspection and cleaning
V
CES
= 600V
V
CE(
ON
)typ =
1.5V
@V
GE
= 15V, I
C
= 50A
E
Benefits
q
q
q
q
Highest power density and efficiency available
HEXFRED diodes optimized for performance with IGBTs;
Minimized recovery characteristics
IGBTs optimized for specific application conditions; high input impedance
requires low gate drive power
Low noise and interference
Parameter
Max.
600
100
50
400
400
50
400
鹵 20
350
140
-55 to + 150
SMD-10
Absolute Maximum Ratings
Units
V
A
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聦
Clamped Inductive Load Current
聧
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
0.59
6.0(0.21)
Max.
0.36
0.69
鈥?/div>
鈥?/div>
Units
擄C/W
g (oz)
Notes:
聦
Repetitive rating: V
GE
= 20V; pulse width limited by
maximum junction temperature (figure 20)
聧
V
CC
= 80%(V
CES
), V
GE
= 20V, L=10碌H, R
G
= 5.0鈩?/div>
(figure 19)
聨
Pulse width
鈮?/div>
80碌s; duty factor
鈮?/div>
0.1%.
聫
Pulse width 5.0碌s, single shot.
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
IRG4ZC70UD相關(guān)型號(hào)PDF文件下載
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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