IRG4RC20F Datasheet

IC型號：
IRG4RC20F
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.8...
文件大小：
264.08KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD - 91731A

IRG4RC20F

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?Fast: Optimized for medium operating

frequencies (1-5 kHz in hard switching, >20

kHz in resonant mode).

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation IGBTs.

鈥?Industry standard TO-252AA package

鈥?Combines very low V

CE(on)

with low switching

losses

Fast Speed IGBT

CES

= 600V

CE(on) typ.

= 1.82V

= 15V, I

= 12A

N-channel

Benefits

鈥?Generation 4 IGBTs offer highest efficiency

鈥?Optimized for specific application conditions

鈥?High power density and current rating

D-Pak

TO-252AA

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

聛

Clamped Inductive Load Current

聜

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

聝

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

Max.

600

鹵 20

5.0

-55 to + 150

300 (0.063 in. (1.6mm) from case )

10 lbf鈥n (1.1N鈥)

Units

擄C

Thermal Resistance

Parameter

胃JC

胃JA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Weight

Typ.

鈥撯€撯€?/div>

0.3 (0.01)

Max.

1.9

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

2/22/01

標(biāo)準(zhǔn)包裝
75
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時的最大Vce（開）
2.1V @ 15V，12A
電流 - 集電極 (Ic)（最大）
22A
功率 - 最大
66W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應(yīng)商設(shè)備封裝
D-Pak
包裝
管件
其它名稱
*IRG4RC20F

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