PD 91571A
IRG4RC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
UltraFast CoPack IGBT
V
CES
= 600V
V
CE(on) typ.
=
2.15V
鈥?UltraFast: Optimized for medium operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode).
鈥?Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
鈥?Industry standard TO-252AA package
鈥?Generation 4 IGBT's offer highest efficiencies
available
鈥?IGBT's optimized for specific application conditions
鈥?HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
鈥?Lower losses than MOSFET's conduction and Diode
losses
G
@V
GE
= 15V, I
C
= 5.0A
E
n-cha nn el
t
f
(typ.) = 140ns
Benefits
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
8.5
5.0
34
34
4.0
16
鹵 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.3 (0.01)
Max.
3.3
7.0
50
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
Details of note
Q
through
T
are on the last page
www.irf.com
1
12/30/00
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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