2,'$%&)
IRG4RC10SD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Extremely low voltage drop 1.1V(typ) @ 2A
鈥?S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
鈥?Tight parameter distribution
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
鈥?Industry standard TO-252AA package
C
Standard Speed CoPack
IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.10V
@V
GE
= 15V, I
C
= 2.0A
n-ch an nel
Benefits
鈥?Generation 4 IGBT's offer highest efficiencies
available
鈥?IGBT's optimized for specific application conditions
鈥?HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
鈥?Lower losses than MOSFET's conduction and
Diode losses
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
14
8.0
18
18
4.0
16
鹵 20
38
15
-55 to +150
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.3 (0.01)
Max.
3.3
7.0
50
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
12/30/00
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