PD - 91685
IRG4PSH71U
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
鈥?Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
鈥?Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
鈥?Creepage distance increased to 5.35mm
C
UltraFast Speed IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
= 2.50V
@V
GE
= 15V, I
C
= 50A
n-channel
Benefits
鈥?Generation 4 IGBT's offer highest efficiencies
available
鈥?Maximum power density, twice the power
handling of the TO-247, less space than TO-264
鈥?IGBTs optimized for specific application conditions
鈥?Cost and space saving in designs that require
multiple, paralleled IGBTs
SUPER - 247
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Max.
1200
99
50
200
200
鹵20
150
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
脙聶
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
d
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
g
V
mJ
W
擄C
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
20 (2.0)
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
6 (0.21)
Max.
0.36
鈥撯€撯€?/div>
38
鈥撯€撯€?/div>
Units
擄C/W
N (kgf)
g (oz.)
www.irf.com
1
5/24/04
IRG4PSH71U 產(chǎn)品屬性
25
分離式半導(dǎo)體產(chǎn)品
IGBT - 單路
-
-
1200V
2.7V @ 15V，70A
99A
350W
標(biāo)準(zhǔn)型
通孔
TO-274AA
SUPER-247（TO-274AA）
散裝
*IRG4PSH71U
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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