PD - 91687A
PRELIMINARY
IRG4PSH71K
Short Circuit Rated
UltraFast IGBT
C
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
鈥?High short circuit rating IGBTs, optimized for
motorcontrol
鈥?Minimum switching losses combined with low
conduction losses
鈥?Tightest parameter distribution
鈥?Creepage distance increased to 5.35mm
V
CES
= 1200V
G
E
V
CE(on) typ.
= 2.97V
@V
GE
= 15V, I
C
= 42A
n-channel
Benefits
鈥?Highest current rating IGBT
鈥?Maximum power density, twice the power
handling of the TO-247, less space than TO-264
SUPER - 247
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
t
SC
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聦
Clamped Inductive Load Current
聧
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
聨
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1200
78
42
156
156
10
鹵 20
170
350
140
-55 to + 150
300 (0.063 in. (1.6mm from case )
Units
V
A
碌s
V
mJ
W
擄C
Thermal Resistance\ Mechanical
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
20.0(2.0)
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
鈥撯€撯€?/div>
6 (0.21)
Max.
0.36
鈥撯€撯€?/div>
38
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Units
擄C/W
N (kgf)
g (oz)
www.irf.com
1
5/11/99
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IRG4PSH71K相關(guān)型號(hào)PDF文件下載
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.2...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.3...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
IRF [Inter...