PD - 91684A
PRELIMINARY
IRG4PSC71KD
Short Circuit Rated
UltraFast IGBT
C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
鈥?High abort circuit rating IGBTs, optimized for
motorcontrol
鈥?Minimum switching losses combined with low
conduction losses
鈥?Tightest parameter distribution
鈥?IGBT co-packaged with ultrafast soft recovery
antiparallel diode
鈥?Creepage distance increased to 5.35mm
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.83V
@V
GE
= 15V, I
C
= 60A
n-ch an nel
Benefits
鈥?Highest current rating copack IGBT
鈥?Maximum power density, twice the power
handling of the TO-247, less space than TO-264
鈥?HEXFRED
TM
diode optimized for operation with
IGBT, to minimize EMI, noise and switching losses
SUPER - 247
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聛
Clamped Inductive Load Current
聜
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
85
聟
60
200
200
50
200
10
鹵 20
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
碌s
V
W
擄C
Thermal Resistance\ Mechanical
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
20.0(2.0)
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
鈥撯€撯€?/div>
6 (0.21)
Max.
0.36
0.69
鈥撯€撯€?/div>
38
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Units
擄C/W
N (kgf)
g (oz)
www.irf.com
1
5/11/99
IRG4PSC71KD 產(chǎn)品屬性
25
分離式半導(dǎo)體產(chǎn)品
IGBT - 單路
-
-
600V
2.3V @ 15V，60A
85A
350W
標(biāo)準(zhǔn)型
通孔
TO-274AA
SUPER-247（TO-274AA）
散裝
*IRG4PSC71KD
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.2...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.3...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
IRF [Inter...
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