IRG4PH50S Datasheet

IC型號(hào)：
IRG4PH50S
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1....
文件大?。?/label>
130.89KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD -91712A

IRG4PH50S

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?Standard: Optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz)

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

鈥?Industry standard TO-247AC package

Standard Speed IGBT

CES

=1200V

CE(on) typ.

= 1.47V

= 15V, I

= 33A

n-channel

Benefits

鈥?Generation 4 IGBT's offer highest efficiency available

鈥?IGBT's optimized for specified application conditions

鈥?Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

TO-247AC

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

Max.

1200

114

鹵20

270

200

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf鈥n (1.1N鈥)

Units

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

0.24

鈥撯€撯€?/div>

6.0 (0.21)

Max.

0.64

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

7/7/2000

飽和電壓, Vce sat 最大:
1.47V
功耗, Pd:
200W
電壓, Vceo:
1.2kV
封裝類型:
TO-247
針腳數(shù):
3
SVHC(高度關(guān)注物質(zhì)):
No SVHC (18-Jun-2012)
上升時(shí)間:
29ns
下降時(shí)間最大:
638ns
功率, Pd:
200W
功耗:
200W
封裝類型:
TO-247
晶體管極性:
?頻道
最大功耗:
200W
最大連續(xù)電流, Ic:
57A
溫度 @ 電流測(cè)量:
25°C
滿功率溫度:
25°C
電流, Icm 脈沖:
114A

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