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IRG4PH50K Datasheet

  • IRG4PH50K

  • INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2....

  • 6頁(yè)

  • IRF

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PD - 9.1576
IRG4PH50K
INSULATED GATE BIPOLAR TRANSISTOR
Features
q
Short Circuit Rated
UltraFast IGBT
C
High short circuit rating optimized for motor control,
t
sc
=10碌s, V
CC
= 720V, T
J
= 125擄C, V
GE
= 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter
parameter distribution and higher efficiency than
previous generations
G
E
V
CES
= 1200V
V
CE(on) typ.
=
2.77V
@V
GE
= 15V, I
C
= 24A
q
q
n-channel
Benefits
q
As a Freewheeling Diode we recommend our HEXFRED
TM
ultrafast, ultrasoft recovery diodes for minimum EMI/Noise
and switching losses in the Diode and IGBT
Latest generation 4 IGBTs offer highest power density
motor controls possible
This part replaces the IRGPH50K and IRGPH50M devices
q
q
TO-247 AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聦
Clamped Inductive Load Current
聧
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
聨
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
1200
45
24
90
90
10
鹵20
190
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1N鈥)
Units
V
A
碌s
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥?/div>
0.24
鈥?/div>
6 (0.21)
Max.
0.64
鈥?/div>
40
鈥?/div>
Units
擄C/W
g (oz)
www.irf.com
C-1

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  • 英文版
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  • 英文版
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    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
    IRF [Inter...

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