PD- 91575B
IRG4PH50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?High short circuit rating optimized for motor control,
t
sc
=10碌s, V
CC
= 720V , T
J
= 125擄C,
V
GE
= 15V
鈥?Combines low conduction losses with high
switching speed
鈥?Tighter parameter distribution and higher efficiency
than previous generations
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
=
2.77V
@V
GE
= 15V, I
C
= 24A
n-ch an nel
Benefits
鈥?Latest generation 4 IGBT's offer highest power density
motor controls possible
鈥?HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
鈥?This part replaces the IRGPH50KD2 and IRGPH50MD2
products
鈥?For hints see design tip 97003
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
45
24
90
90
16
90
10
鹵 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
碌s
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
6 (0.21)
Max.
0.64
0.83
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
7/7/2000
IRG4PH50KD相關(guān)型號(hào)PDF文件下載
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