PD - 95570
IRG4PH40UD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
聲 UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
聲 New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
聲 IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
聲 Industry standard TO-247AC package
聲 Lead-Free
C
UltraFast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.72V
@V
GE
= 15V, I
C
= 20A
n-channel
Benefits
聲 Higher switching frequency capability than
competitive IGBTs
聲 Highest efficiency available
聲 HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing.
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ Tc = 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Max.
600
40
20
160
160
10
40
鹵20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf in (1.1N m)
Units
V
A
脙聶
聶
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
V
W
擄C
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
y
y
Min.
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Typ.
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0.24
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6 (0.21)
Max.
0.77
2.5
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40
鈥撯€撯€?/div>
Units
擄C/W
g (oz.)
www.irf.com
1
07/19/04
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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