PD - 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
V
CES
= 1200V
聲
UltraFast IGBT optimized for high operating
frequencies up to 200kHz in resonant mode
聲
IGBT co-packaged with HEXFRED
TM
ultrafast
ultra-soft-recovery anti-parallel diode for use in
resonant circuits
聲
Industry standard TO-247AD package with
extended leads
G
E
V
CE(on) typ.
=
2.43V
@V
GE
= 15V, I
C
= 21A
Benefits
n-channel
Applications
聲
Higher switching frequency capability than
competitive IGBTs
聲 Highest efficiency available
聲
HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less / no snubbing
聲
Induction cooking systems
聲
Microwave Ovens
聲
Resonant Circuits
TO-247AD
Parameter
Max.
1200
41
21
82
82
10
40
鹵20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf in (1.1N m)
Absolute Maximum Ratings
Units
V
A
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ Tc = 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
脙聶
d
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
V
W
擄C
y
y
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
6 (0.21)
Max.
0.77
2.5
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g (oz.)
www.irf.com
1
9/17/03
IRG4PH40UD2-E相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.2...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.3...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
IRF [Inter...
1
2
3
4
5
6
7
8
9
10
