PD -91808
IRG4PH40S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Extremely low on state voltage drop 1.0V typical at
5.0A
鈥?Extremely low V
CE(on)
variation from lot to lot
鈥?Industry standard TO-247AC package
G
E
C
V
CES
= 1200V
V
CE(on) typ.
= 1.46V
@V
GE
= 15V, I
C
= 20A
N-channel
Benefits
鈥?High current density systems
鈥?Optimized for specific application conditions
鈥?Lower voltage drop than many high voltage MOSFETs
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聛
Clamped Inductive Load Current
聜
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
聝
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
1200
33
20
66
66
鹵20
250
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1N鈥)
Units
V
A
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
6.0(0.21)
Max.
0.77
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
9/23/98
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