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IRG4PF50W Datasheet

  • IRG4PF50W

  • INSULATED GATE BIPOLAR TRANSISTOR

  • 140.13KB

  • 8頁(yè)

  • IRF

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PD - 91710
IRG4PF50W
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Optimized for use in Welding and Switch-Mode
Power Supply applications
鈥?Industry benchmark switching losses improve
efficiency of all power supply topologies
鈥?50% reduction of Eoff parameter
鈥?Low IGBT conduction losses
鈥?Latest technology IGBT design offers tighter
parameter distribution coupled with exceptional
reliability
C
V
CES
= 900V
G
E
V
CE(on) typ.
= 2.25V
@V
GE
= 15V, I
C
= 28A
n-channel
Benefits
鈥?Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-
die MOSFETs up to 100kHz
鈥?Of particular benefit in single-ended converters and
Power Supplies 150W and higher
鈥?Reduction in critical Eoff parameter due to minimal
minority-carrier recombination coupled with low on-
state losses allow maximum flexibility in device
application
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聦
Clamped Inductive Load Current
聧
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
聨
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
900
51
28
204
204
鹵 20
186
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
Units
V
A
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
6 (0.21)
Max.
0.64
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
4/15/98

IRG4PF50W相關(guān)型號(hào)PDF文件下載

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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.2...
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    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.3...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
    IRF [Inter...

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