PD - 94443
IRG4PC60U
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?UltraFast: Optimized for high operating
frequencies up to 50 kHz in hard switching,
>200 kHz in resonant mode.
鈥?Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
鈥?Industry standard TO-247AC package.
C
UltraFast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.6V
@V
GE
= 15V, I
C
= 40A
n-channel
Benefits
鈥?Generation 4 IGBT's offer highest efficiency available.
鈥?IGBT's optimized for specified application conditions.
鈥?Designed for best performance when used with IR
Hexfred & IR Fred companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
75
40
300
300
鹵 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
V
A
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
----
0.24
----
6 (0.21)
Max.
0.24
----
40
----
Units
擄C/W
g (oz)
www.irf.com
1
04/26/02