IRG4PC50S-P Datasheet

IC型號(hào)：
IRG4PC50S-P
PDF描述：
600V DC-1 kHz (Standard) Discrete IGBT in a SM TO-247 packag...
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144.49KB
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8頁
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PD - 91581B

IRG4PC50S-P

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?Standard: Optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz)

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

鈥?Industry standard TO-247AC package

鈥?Surface Mountable

Standard Speed IGBT

CES

= 600V

CE(on) typ.

1.28V

= 15V, I

= 41A

n-channel

Benefits

鈥?Generation 4 IGBT's offer highest efficiency available

鈥?IGBT's optimized for specified application conditions

鈥?Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Surface Mountable

TO-247

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Max Reflow Temperature

Max.

600

140

鹵 20

200

-55 to + 150

225

Units

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Typ.

鈥撯€撯€?/div>

0.24

鈥撯€撯€?/div>

Max.

0.64

鈥撯€撯€?/div>

Units

擄C/W

www.irf.com

05/14/02

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