IRG4PC50K Datasheet

IC型號(hào)：
IRG4PC50K
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84...
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PD - 91583B

IRG4PC50K

INSULATED GATE BIPOLAR TRANSISTOR

Short Circuit Rated

UltraFast IGBT

Features

鈥?High short circuit rating optimized for motor control,

=10碌s, @360V V

(start), T

= 125擄C,

= 15V

鈥?Combines low conduction losses with high

switching speed

鈥?Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

CES

= 600V

CE(on) typ.

1.84V

= 15V, I

= 30A

n-channel

Benefits

鈥?As a Freewheeling Diode we recommend our

HEXFRED

ultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

鈥?Latest generation 4 IGBTs offer highest power

density motor controls possible

鈥?This part replaces the IRGPC50K and IRGPC50M

devices

TO-247AC

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

Max.

600

104

鹵20

170

200

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf鈥n (1.1N鈥)

Units

碌s

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

0.24

鈥撯€撯€?/div>

6 (0.21)

Max.

0.64

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

4/15/2000

標(biāo)準(zhǔn)包裝
25
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時(shí)的最大Vce（開）
2.2V @ 15V，30A
電流 - 集電極 (Ic)（最大）
52A
功率 - 最大
200W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
通孔
封裝/外殼
TO-247-3
供應(yīng)商設(shè)備封裝
TO-247AC
包裝
散裝
其它名稱
*IRG4PC50K

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