PD -91582B
IRG4PC50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
q
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
V
CE(on) typ.
=
1.84V
q
q
q
q
q
q
Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz, and Short Circuit Rated
to 10碌s @125擄C, V
GE
= 15V
Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Generation 4 IGBTs offer highest efficiencies available
HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Parameter
G
E
@V
GE
= 15V, I
C
= 30A
n -c h a n n e l
Benefits
Absolute Maximum Ratings
Max.
600
52
30
104
104
25
280
10
鹵 20
200
78
-55 to +150
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聦
Clamped Inductive Load Current
聧
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
TO-247AC
Units
V
A
碌s
V
W
擄C
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Thermal Resistance
Parameter
R
qJC
R
qJC
R
qCS
R
qJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
0.24
鈥?/div>
6 (0.21)
Max.
0.64
0.83
鈥?/div>
40
鈥?/div>
Units
擄C/W
g (oz)
www.irf.com
1
12/3/98
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