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IRG4PC40K Datasheet

  • IRG4PC40K

  • INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1...

  • 8頁

  • IRF

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PD - 9.1585B
IRG4PC40K
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10碌s @ 125擄C, V
GE
= 15V
鈥?Generation 4 IGBT design provides higher efficiency
than Generation 3
鈥?Industry standard TO-247AC package
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.1V
@V
GE
= 15V, I
C
= 25A
n-channel
Benefits
鈥?Generation 4 IGBTs offer highest efficiency available
鈥?IGBTs optimized for specified application conditions
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
42
25
84
84
10
鹵20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1N鈥)
Units
V
A
碌s
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
6 (0.21)
Max.
0.77
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
4/15/2000

IRG4PC40K 產品屬性

  • 25

  • 分離式半導體產品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 2.6V @ 15V，25A

  • 42A

  • 160W

  • 標準型

  • 通孔

  • TO-247-3

  • TO-247AC

  • 散裝

  • *IRG4PC40K

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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.2...
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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.3...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
    IRF
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
    IRF [Inter...

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