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IRG4PC40FD Datasheet

  • IRG4PC40FD

  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...

  • 10頁

  • IRF

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PD 91464B
IRG4PC40FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
鈥?Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
鈥?Industry standard TO-247AC package
C
Fast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.50V
@V
GE
= 15V, I
C
= 27A
n-cha nn el
Benefits
鈥?Generation -4 IGBT's offer highest efficiencies
available
鈥?IGBT's optimized for specific application conditions
鈥?HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
鈥?Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
49
27
200
200
15
200
鹵 20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
0.77
1.7
------
40
------
Units
擄C/W
g (oz)
www.irf.com
1
12/30/00

IRG4PC40FD 產(chǎn)品屬性

  • 25

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 1.7V @ 15V，27A

  • 49A

  • 160W

  • 標(biāo)準(zhǔn)型

  • 通孔

  • TO-247-3

  • TO-247AC

  • 散裝

  • *IRG4PC40FD

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