PD -94920
IRG4PC30FPbF
I
NSULATED GATE BIPOLAR TRANSISTOR
Features
聲 Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
聲 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
聲 Industry standard TO-247AC package
聲 Lead-Free
C
Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.59V
@V
GE
= 15V, I
C
= 17A
n-channel
Benefits
聲 Generation 4 IGBT's offer highest efficiency available
聲 IGBT's optimized for specified application conditions
聲 Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聛
Clamped Inductive Load Current
聜
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
聝
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
31
17
120
120
鹵 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf聲in (1.1N聲m)
Units
V
A
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
聳聳聳
0.24
聳聳聳
6 (0.21)
Max.
1.2
聳聳聳
40
聳聳聳
Units
擄C/W
g (oz)
www.irf.com
1
12/30/03