IRG4P254S Datasheet

IC型號：
IRG4P254S
PDF描述：
INSULATED GATE BIPOLAR TRANSISOR
文件大?。?/label>
127.77KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD -91591A

IRG4P254S

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?Standard: Optimized for minimum saturation

voltage and operating frequencies up to 10kHz

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

鈥?Industry standard TO-247AC package

Standard Speed IGBT

CES

= 250V

CE(on) typ.

1.32V

= 15V, I

= 55A

n-channel

Benefits

鈥?Generation 4 IGBT's offer highest efficiency available

鈥?IGBT's optimized for specified application conditions

鈥?High Power density

鈥?Lower conduction losses than similarly rated MOSFET

鈥?Lower Gate Charge than equivalent MOSFET

鈥?Simple Gate Drive characteristics compared to Thyristors

TO-247AC

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

Max.

250

98*

196

鹵 20

160

200

-55 to + 150

300 (0.063 in. (1.6mm) from case )

10 lbf鈥n (1.1N鈥)

Units

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

0.24

鈥撯€撯€?/div>

6.0 (0.21)

Max.

0.64

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

Package limited to 70A

www.irf.com

4/15/2000

標(biāo)準(zhǔn)包裝
25
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
250V
Vge, Ic時(shí)的最大Vce（開）
1.5V @ 15V，55A
電流 - 集電極 (Ic)（最大）
98A
功率 - 最大
200W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
通孔
封裝/外殼
TO-247-3
供應(yīng)商設(shè)備封裝
TO-247AC
包裝
散裝
其它名稱
*IRG4P254S

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