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IRG4MC30F Datasheet

  • IRG4MC30F

  • TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 15A I(C) | TO-2...

  • 8頁

  • ETC

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PD -94313B
IRG4MC30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Eletrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
Ceramic eyelets
C
Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) max
=1.7V
@V
GE
= 15V, I
C
= 15A
n-channel
Benefits
鈥?Generation 4 IGBT's offer highest efficiency available
鈥?IGBT's optimized for specified application conditions
鈥?Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-254AA
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
鉃€
Clamped Inductive Load Current
鉃?/div>
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
600
28
15
112
112
鹵 20
75
30
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
Units
V
A
V
W
擄C
g
Thermal Resistance
Parameter
R thJC
Junction-to-Case
Min Typ Max Units
鈥?/div>
鈥?/div>
1.67
擄C/W
Test Conditions
www.irf.com
1
12/18//01

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