IRG4IBC30WPBF Datasheet

IC型號(hào)：
IRG4IBC30WPBF
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR
文件大小：
255.47KB
PDF頁(yè)數(shù)：
8頁(yè)
芯片廠家：
IRF

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上傳產(chǎn)品規(guī)格書

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PD - 95326

IRG4IBC30WPbF

INSULATED GATE BIPOLAR TRANSISTOR

Features

Benefits

聲

Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

鈥?2.5kV, 60s insulation voltage

聠

聲 Industry-benchmark

switching losses improve

efficiency of all power supply topologies

聲

50% reduction of Eoff parameter

聲

Low IGBT conduction losses

聲

Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

鈥?Industry standard Isolated TO-220 Fullpak

outline

鈥?Lead-Free

CES

= 600V

CE(on) typ.

2.1V

= 15V, I

= 12 A

n-channel

聲

Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

聲

Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

聲

Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

TO-220 FULLP

Absolute Maximum Ratings

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Parameter

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

聛

Clamped Inductive Load Current

聜

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

聝

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

Max.

600

8.4

鹵 20

180

-55 to + 150

300 (0.063 in. (1.6mm from case )

10 lbf鈥n (1.1N鈥)

Units

擄C

Thermal Resistance

Parameter

胃JC

胃JA

Junction-to-Case - IGBT

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

2.0 (0.07)

Max.

2.8

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

6/1/04

標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時(shí)的最大Vce（開(kāi)）
2.7V @ 15V，12A
電流 - 集電極 (Ic)（最大）
17A
功率 - 最大
45W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
通孔
封裝/外殼
TO-220-3 整包
供應(yīng)商設(shè)備封裝
TO-220AB 整包
包裝
管件
其它名稱
*IRG4IBC30WPBF

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