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IRG4IBC30UD Datasheet

  • IRG4IBC30UD

  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...

  • 10頁

  • IRF

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PD91753A
IRG4IBC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?2.5kV, 60s insulation voltage
U
鈥?4.8 mm creapage distance to heatsink
鈥?UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
鈥?Tighter parameter distribution
鈥?Industry standard Isolated TO-220 Fullpak
TM
outline
C
UltraFast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.95V
@V
GE
= 15V, I
C
= 12A
n-cha nn el
Benefits
鈥?Simplified assembly
鈥?Highest efficiency and power density
鈥?HEXFRED
TM
antiparallel Diode minimizes
switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
Visol
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to CaseU
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
17
8.9
92
92
8.5
92
2500
鹵 20
45
18
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
2.0 (0.07)
Max.
2.8
4.1
65
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
7/17/2000

IRG4IBC30UD 產品屬性

  • 50

  • 分離式半導體產品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 2.1V @ 15V，12A

  • 17A

  • 45W

  • 標準型

  • 通孔

  • TO-220-3 整包

  • TO-220AB 整包

  • 管件

  • *IRG4IBC30UD

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  • 英文版
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