IRG4IBC30S Datasheet

IC型號：
IRG4IBC30S
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR
文件大?。?/label>
127.10KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD - 94293

IRG4IBC30S

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?Standard: Optimized for minimum saturation

voltage and low operating freqencies (<1 kHz)

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

鈥?Industry standard TO-220 Full-Pak

CES

= 600V

CE(on) typ.

= 1.4V

= 15V, I

= 18A

N-channel

Benefits

鈥?Generation 4 IGBTs offer highest efficiencies available

鈥?IGBTs optimized for specific application conditions

鈥?Designed to be a "drop-in" replacement for equivalent

industry -standard Generation 3 IR IGBTs

TO-220 Full-Pak

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector CurrentQ

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

600

23.5

13.0

鹵 20

-55 to + 150

300 (0.063 in. (1.6mm) from case)

Units

擄C

Thermal Resistance

Parameter

胃JC

胃JA

Junction-to-Case

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

2.1 (0.075)

Max.

2.8

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

08/02/01

標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時的最大Vce（開）
1.6V @ 15V，18A
電流 - 集電極 (Ic)（最大）
23.5A
功率 - 最大
45W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
通孔
封裝/外殼
TO-220-3 整包
供應(yīng)商設(shè)備封裝
TO-220AB 整包
包裝
管件
其它名稱
*IRG4IBC30S

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