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IRG4IBC30KD Datasheet

  • IRG4IBC30KD

  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...

  • 10頁(yè)

  • IRF

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PD -91690A
IRG4IBC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?High switching speed optimized for up to 25kHz
with low V
CE(on)
鈥?Short Circuit Rating 10碌s @ 125擄C, V
GE
= 15V
鈥?Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
鈥?Industry standard TO-220 FULLPAK
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.21V
@V
GE
= 15V, I
C
= 9.2A
n-ch an nel
Benefits
鈥?Generation 4 IGBTs offer highest efficiencies available
maximizing the power density of the system
鈥?IGBT's optimized for specific application conditions
鈥?HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI
鈥?Designed to exceed the power handling capability of
equivalent industry-standard IGBT
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
t
sc
V
ISOL
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
QU
Clamped Inductive Load Current
RU
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
17
9.2
34
34
9.2
34
10
2500
鹵 20
45
18
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
碌s
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
2.0 (0.07)
Max.
2.8
3.7
65
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
4/24/2000

IRG4IBC30KD 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 2.7V @ 15V，16A

  • 17A

  • 45W

  • 標(biāo)準(zhǔn)型

  • 通孔

  • TO-220-3 整包

  • TO-220AB 整包

  • 管件

  • *IRG4IBC30KD

IRG4IBC30KD相關(guān)型號(hào)PDF文件下載

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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.2...
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    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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