PD 91785A
IRG4IBC20W
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
鈥?2.5kV, 60s insulation voltage
V
鈥?Industry-benchmark switching losses improve
efficiency of all power supply topologies
鈥?50% reduction of Eoff parameter
鈥?Low IGBT conduction losses
鈥?Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
鈥?Industry standard Isolated TO-220 Fullpak
TM
outline
C
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.16V
@V
GE
= 15V, I
C
= 6.5A
n-channel
Benefits
鈥?Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
鈥?Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
鈥?Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
11.8
6.2
52
52
鹵 20
200
34
14
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf鈥n (1.1N鈥)
Units
V
A
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
2.0 (0.07)
Max.
3.7
65
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
12/30/00
next