IRG4IBC20KD Datasheet

IC型號：
IRG4IBC20KD
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
文件大?。?/label>
200.64KB
PDF頁數(shù)：
10頁
芯片廠家：
IRF

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PD -91689A

IRG4IBC20KD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

鈥?High switching speed optimized for up to 25kHz

with low V

CE(on)

鈥?Short Circuit Rating 10碌s @ 125擄C, V

= 15V

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

鈥?IGBT co-packaged with HEXFRED

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

鈥?Industry standard TO-220 FULLPAK

Short Circuit Rated

UltraFast IGBT

CES

= 600V

CE(on) typ.

2.27V

= 15V, I

= 6.3A

n-ch an nel

Benefits

鈥?Generation 4 IGBTs offer highest efficiencies available

maximizing the power density of the system

鈥?IGBTs optimized for specific application conditions

鈥?HEXFRED

diodes optimized for performance with IGBTs.

Minimized recovery characteristics reduce noise EMI

鈥?Designed to exceed the power handling capability of

equivalent industry-standard IGBTs

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

@ T

= 100擄C

ISOL

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

RMS Isolation Voltage, Terminal to Case, t = 1 min

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

Max.

600

11.5

6.3

2500

鹵 20

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf鈥n (1.1 N鈥)

Units

碌s

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

2.0 (0.07)

Max.

3.7

5.5

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

4/24/2000

標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時的最大Vce（開）
2.8V @ 15V，9A
電流 - 集電極 (Ic)（最大）
11.5A
功率 - 最大
34W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
通孔
封裝/外殼
TO-220-3 整包
供應(yīng)商設(shè)備封裝
TO-220AB 整包
包裝
管件
其它名稱
*IRG4IBC20KD

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