鈥?/div>
C
Fast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.66V
@V
GE
= 15V, I
C
= 9.0A
n-channel
Benefits
鈥?Simplified assembly
鈥?Highest efficiency and power density
鈥?HEXFRED
TM
antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
Visol
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聛
Clamped Inductive Load Current
聜
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case聟
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
TO-220 FULLP
AK
Max.
600
14.3
7.7
64
64
6.5
64
2500
鹵 20
34
14
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
2.0 (0.07)
Max.
3.7
5.1
65
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
12/30/03
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