PD- 91775
IRG4CH50UB
IRG4CH50UB IGBT Die in Wafer Form
C
G
E
1200 V
Size 5
Ultra-Fast Speed
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
4.5V Max.
1200V Min.
3.0V Min., 6.0V Max.
300 碌A Max.
鹵
11 碌A Max.
Test Conditions
I
C
= 10A, T
J
= 25擄C, V
GE
= 15V
T
J
= 25擄C, I
CES
= 250碌A, V
GE
= 0V
V
GE
= V
CE
, T
J
=25擄C, I
C
=250碌A
T
J
= 25擄C, V
CE
= 1200V
T
J
= 25擄C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Reference Standard IR packaged part ( for design ) : IRG4PH50U
Cr-Ni / V-Ag ( 1kA-2kA-.2.5kA )
99% Al, 1% Si (4 microns)
0.257" x 0.260"
150mm, with std. < 100 > flat
.015" + / -.003"
01-5227
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
Die Outline
9/24/98
1
