PD- 91769
IRG4CH40UB
IRG4CH40UB IGBT Die in Wafer Form
C
G
E
1200 V
Size 4
Ultra-Fast Speed
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
4.5V Max.
1200V Min.
3.0V Min., 6.0V Max.
300 碌A(chǔ) Max.
鹵
11 碌A(chǔ) Max.
Test Conditions
I
C
= 10A, T
J
= 25擄C, V
GE
= 15V
T
J
= 25擄C, I
CES
= 250碌A(chǔ), V
GE
= 0V
V
GE
= V
CE
, T
J
=25擄C, I
C
=250碌A(chǔ)
T
J
= 25擄C, V
CE
= 1200V
T
J
= 25擄C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Recommended Die Attach Conditions
Reference Standard IR packaged part ( for design ) : IRG4PH40U
Cr-Ni / V-Ag ( 1kA-2kA-.2.5kA )
99% Al, 1% Si (4 microns)
0.170" x 0.243"
150mm, with std. < 100 > flat
.015" + / -.003"
01-5242
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Die Outline
9/24/98
1
