PD -94307
IRG4CF50WB
IRG4CF50WB IGBT Die in Wafer Form
C
G
E
900 V
Size 5
Warp Speed
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Guaranteed (Min/Max)
Collector-to-Emitter Saturation Voltage
3.11V Max.
Collector-to-Emitter Breakdown Voltage
900V Min.
Gate Threshold Voltage
3.0V Min., 6.0V Max.
Zero Gate Voltage Collector Current
250 碌A(chǔ) Max.
Gate-to-Emitter Leakage Current
鹵
1.1 碌A(chǔ) Max.
Test Conditions
I
C
= 10A, T
J
= 25擄C, V
GE
= 15V
T
J
= 25擄C, I
CES
= 250碌A(chǔ), V
GE
= 0V
V
GE
= V
CE
, T
J
=25擄C, I
C
=250碌A(chǔ)
T
J
= 25擄C, V
CE
= 900V
T
J
= 25擄C, V
GE
= +/- 20V
Mechanical Data
Cr-Ni-Ag ( 1kA-2kA-.2.5kA )
99% Al, 1% Si (4 microns)
0.257" x 0.260"
150mm, with std. < 100 > flat
.015" + / -.003"
01-5270
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Die Attach Conditions
For optimum electrical results, die attach
temperature should not exceed 300C
Reference Standard IR packaged part (for design) : IRG4PF50W (When available)
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Die Outline
8/29/01
1
