PD- 91771
IRG4CC30UB
IRG4CC30UB IGBT Die in Wafer Form
C
G
E
600 V
Size 3
Ultra-Fast Speed
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
4.5V Max.
600V Min.
3.0V Min., 6.0V Max.
300 碌A(chǔ) Max.
鹵 11碌A(chǔ) Max.
Test Conditions
I
C
= 10A, T
J
= 25擄C, V
GE
= 15V
T
J
= 25擄C, I
CES
= 250碌A(chǔ), V
GE
= 0V
V
GE
= V
CE
, T
J
=25擄C, I
C
=250碌A(chǔ)
T
J
= 25擄C, V
CE
= 600V
T
J
= 25擄C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Reference Standard IR packaged part ( for design ) : IRG4BC30U
Cr-Ni / V-Ag (1 kA-2kA-2.5kA )
99% Al, 1% Si (3 microns)
0.141" x 0.164"
150mm, with std. < 100 > flat
.015" + / -.003"
01-5225
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
Die Outline
10/2/98
1
