IRG4BH20K-S Datasheet

IC型號：
IRG4BH20K-S
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR
文件大小：
165.37KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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上傳產(chǎn)品規(guī)格書

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PD -93960

IRG4BH20K-S

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?High short circuit rating optimized for motor control,

=10碌s @ V

= 720V , T

= 125擄C,

= 15V

鈥?Combines low conduction losses with high

switching speed

鈥?Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

鈥?Industry standard D

Pak package

Short Circuit Rated

UltraFast IGBT

CES

= 1200V

CE(on) typ.

= 3.17V

= 15V, I

= 5.0A

n-channel

Benefits

鈥?As a Freewheeling Diode we recommend our

HEXFRED

ultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

鈥?Latest generation 4 IGBT's offer highest power

density motor controls possible

Pak

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

聛

Clamped Inductive Load Current

聜

Short Circuit Withstand Time

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

聝

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Max.

1200

5.0

鹵20

130

-55 to +150

Units

碌s

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

0.24

鈥撯€撯€?/div>

6 (0.21)

Max.

2.1

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

8/17/00

標準包裝
50
類別
分離式半導體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
1200V
Vge, Ic時的最大Vce（開）
4.3V @ 15V，5A
電流 - 集電極 (Ic)（最大）
11A
功率 - 最大
60W
輸入類型
標準型
安裝類型
表面貼裝
封裝/外殼
TO-263-3，D²Pak（2 引線+接片），TO-263AB
供應商設備封裝
D2PAK
包裝
管件
其它名稱
*IRG4BH20K-S

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型號

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描述

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