IRG4BC30U-S Datasheet

IC型號：
IRG4BC30U-S
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=...
文件大?。?/label>
310.40KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD - 91803

IRG4BC30U-S

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

鈥?Industry standard D

Pak package

UltraFast Speed IGBT

CES

= 600V

CE(on) typ.

= 1.95V

= 15V, I

= 12A

n-channel

Benefits

鈥?Generation 4 IGBT's offer highest efficiency available

鈥?IGBT's optimized for specified application conditions

鈥?Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Pak

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

聛

Clamped Inductive Load Current

聜

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

聝

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Max.

600

鹵 20

100

-55 to + 150

Units

Thermal Resistance

Parameter

qJC

qJA

Junction-to-Case

Junction-to-Ambient, ( PCB Mounted,steady-state)*

Typ.

鈥撯€撯€?/div>

Max.

1.2

Units

擄C/W

When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering

techniques refer to application note #AN-994.

www.irf.com

標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時(shí)的最大Vce（開）
2.1V @ 15V，12A
電流 - 集電極 (Ic)（最大）
23A
功率 - 最大
100W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
表面貼裝
封裝/外殼
TO-263-3，D²Pak（2 引線+接片），TO-263AB
供應(yīng)商設(shè)備封裝
D2PAK
包裝
管件
其它名稱
*IRG4BC30U-S

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