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IRG4BC30S Datasheet

  • IRG4BC30S

  • INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4...

  • 8頁

  • IRF

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PD - 91593A
IRG4BC30S
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
鈥?Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
鈥?Industry standard TO-220AB package
C
Standard Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.4V
@V
GE
= 15V, I
C
= 18A
n-channel
Benefits
鈥?Generation 4 IGBTs offer highest efficiency available
鈥?IGBTs optimized for specified application conditions
鈥?Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
34
18
68
68
鹵 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf鈥n (1.1N鈥)
Units
V
A
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
2.0 (0.07)
Max.
1.2
鈥撯€撯€?/div>
80
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
4/17/2000

IRG4BC30S 產品屬性

  • 50

  • 分離式半導體產品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 1.6V @ 15V，18A

  • 34A

  • 100W

  • 標準型

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • *IRG4BC30S

IRG4BC30S相關型號PDF文件下載

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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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  • 英文版
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  • 英文版
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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
    IRF [Inter...
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    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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  • 英文版
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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  • 英文版
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