IRG4BC30SS Datasheet

IC型號：
IRG4BC30SS
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=6...
文件大?。?/label>
153.37KB
PDF頁數(shù)：
9頁
芯片廠家：
IRF

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PD - 94069

IRG4BC30S-S

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?Standard: optimized for minimum saturation

voltage and low operating frequencies (< 1kHz)

鈥?Generation 4 IGBT design provides tight

parameter distribution and high efficiency

Standard Speed IGBT

CES

= 600V

CE(on) typ.

= 1.4V

= 15V, I

= 18A

n-channel

Benefits

鈥?Generation 4 IGBTs offer highest efficiency available

鈥?IGBTs optimized for specified application conditions

Pak

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

聛

Clamped Inductive Load Current

聜

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

聝

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

600

鹵20

100

-55 to +150

300 (0.063 in. (1.6mm) from case )

Units

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

0.50

鈥撯€撯€?/div>

1.44

Max.

1.2

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

12/28/00

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