IRG4BC20U Datasheet

IC型號：
IRG4BC20U
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.8...
文件大?。?/label>
169.42KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD - 91448D

IRG4BC20U

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?UltraFast: optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

鈥?Industry standard TO-220AB package

UltraFast Speed IGBT

CES

= 600V

CE(on) typ.

1.85V

= 15V, I

= 6.5A

n-channel

Benefits

鈥?Generation 4 IGBTs offer highest efficiency available

鈥?IGBTs optimized for specified application conditions

鈥?Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

TO-220AB

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

Max.

600

6.5

鹵 20

5.0

-55 to + 150

300 (0.063 in. (1.6mm from case )

10 lbf鈥n (1.1N鈥)

Units

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

0.50

鈥撯€撯€?/div>

2.0 (0.07)

Max.

2.1

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

4/17/2000

標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時的最大Vce（開）
2.1V @ 15V，6.5A
電流 - 集電極 (Ic)（最大）
13A
功率 - 最大
60W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件
其它名稱
*IRG4BC20U

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