IRG4BC20UD Datasheet

IC型號：
IRG4BC20UD
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
文件大小：
238.51KB
PDF頁數(shù)：
10頁
芯片廠家：
IRF

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上傳產(chǎn)品規(guī)格書

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PD 91449B

IRG4BC20UD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

鈥?UltraFast: optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

鈥?IGBT co-packaged with HEXFRED

錚?/div>

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

鈥?Industry standard TO-220AB package

UltraFast CoPack IGBT

CES

= 600V

CE(on) typ.

1.85V

= 15V, I

= 6.5A

n-cha nn el

Benefits

鈥?Generation -4 IGBTs offer highest efficiencies

available

鈥?IGBTs optimized for specific application conditions

鈥?HEXFRED diodes optimized for performance with

IGBTs. Minimized recovery characteristics require

less/no snubbing

鈥?Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

TO-220AB

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

@ T

= 100擄C

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

Max.

600

6.5

7.0

鹵 20

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf鈥n (1.1 N鈥)

Units

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

Min.

------

-----

------

Typ.

------

0.50

-----

2 (0.07)

Max.

2.1

3.5

------

Units

擄C/W

g (oz)

www.irf.com

3/21/2000

標準包裝
50
類別
分離式半導體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時的最大Vce（開）
2.1V @ 15V，6.5A
電流 - 集電極 (Ic)（最大）
13A
功率 - 最大
60W
輸入類型
標準型
安裝類型
通孔
封裝/外殼
TO-220-3
供應商設備封裝
TO-220AB
包裝
管件
其它名稱
*IRG4BC20UD

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