PD- 94077
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?UltraFast: Optimized for high operating frequencies
8-40 kHz in hard switching, >200kHz in resonant
mode
鈥?Generation 4 IGBT design provides tighter para-
meter distribution and higher efficiency than
Generation 3
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
鈥?Industry standard D
2
Pak package
C
UltraFast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.85V
@V
GE
= 15V, I
C
= 6.5A
N-channel
Benefits
鈥?Generation 4 IGBTs offers highest efficiencies
available
鈥?Optimized for specific application conditions
鈥?HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
鈥?Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
D
2
Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聛
Clamped Inductive Load Current
聜
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
13
6.5
52
52
7.0
52
鹵 20
60
24
-55 to +150
擄C
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥撯€撯€?/div>
0.5
鈥撯€撯€?/div>
1.44
Max.
2.1
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
1/12/01
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