PD -94116
IRG4BC20MD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Rugged: 10碌sec short circuit capable at V
GS
=15V
鈥?Low V
CE(on)
for 4 to 10kHz applications
鈥?IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
鈥?Industry standard D
2
Pak package
C
Short Circuit Rated
Fast IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.85V
@V
GE
= 15V, I
C
= 11A
Benefits
鈥?Offers highest efficiency and short circuit
capability for intermediate applications
鈥?Provides best efficiency for the mid range frequency
(4 to 10kHz)
鈥?Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
鈥?High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
鈥?For Low EMI designs- requires little or no snubbing
鈥?Single Package switch for bridge circuit applications
鈥?Compatible with high voltage Gate Driver IC's
鈥?Allows simpler gate drive
n-cha nn el
D
2
Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
t
sc
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
18
11
36
36
7.0
10
36
鹵 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
碌s
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
2.1
2.5
------
80
------
Units
擄C/W
g (oz)
www.irf.com
1
3/6/01