IRG4BC20KS Datasheet

IC型號：
IRG4BC20KS
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.2...
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163.15KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD - 91620A

IRG4BC20K-S

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?High short circuit rating optimized for motor control,

=10碌s, @360V V

(start), T

= 125擄C,

= 15V

鈥?Combines low conduction losses with high

switching speed

鈥?Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

Short Circuit Rated

UltraFast IGBT

CES

= 600V

CE(on) typ.

2.27V

= 15V, I

= 9.0A

n-channel

Benefits

鈥?As a Freewheeling Diode we recommend our

HEXFRED

ultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

鈥?Latest generation 4 IGBTs offer highest power

density motor controls possible

鈥?This part replaces the IRGBC20K-S and

IRGBC20M-S devices

Pak

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

Max.

600

9.0

鹵20

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf鈥n (1.1N鈥)

Units

碌s

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient ( PCB Mounted,steady-state)V

Weight

Typ.

鈥撯€撯€?/div>

0.5

鈥撯€撯€?/div>

1.44

Max.

2.1

鈥撯€撯€?/div>

Units

擄C/W

www.irf.com

4/24/2000

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