PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10碌s @ 125擄C, V
GE
= 15V
鈥?Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
鈥?Industry standard TO-220AB package
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.27V
@V
GE
= 15V, I
C
= 9.0A
n-ch an nel
Benefits
鈥?Latest generation 4 IGBTs offer highest power density
motor controls possible
鈥?HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
鈥?This part replaces the IRGBC20KD2 and IRGBC20MD2
products
鈥?For hints see design tip 97003
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
16
9.0
32
32
7.0
32
10
鹵 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
碌s
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
2 (0.07)
Max.
2.1
3.5
鈥撯€撯€?/div>
80
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
4/24/2000
IRG4BC20KD 產(chǎn)品屬性
50
分離式半導(dǎo)體產(chǎn)品
IGBT - 單路
-
-
600V
2.8V @ 15V，9A
16A
60W
標(biāo)準(zhǔn)型
通孔
TO-220-3
TO-220AB
管件
*IRG4BC20KD
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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