PD -91783A
IRG4BC20FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
鈥?Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
鈥?Industry standard D
2
Pak package
C
Fast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.66V
@V
GE
= 15V, I
C
= 9.0A
n-cha nn el
Benefits
鈥?Generation 4 IGBTs offer highest efficiencies
available
鈥?IGBTs optimized for specific application conditions
鈥?HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
鈥?Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
D
2
Pak
Max.
600
16
9.0
64
8.0
60
鹵 20
60
24
-55 to +150
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient ( PCB Mounted,steady-state)*
Weight
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.44
Max.
2.1
3.5
80
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
www.irf.com
1
4/24/2000
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