PD - 94082A
IRG4BC15UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
Features
鈥?UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
鈥?IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
鈥?Industry standard TO-220AB package
V
CES
= 600V
G
E
V
CE(on) typ.
= 2.02V
@V
GE
= 15V, I
C
= 7.8A
Benefits
鈥?Best Value for Appliance and Industrial Applications
鈥?High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
鈥?For Low EMI designs- requires little or no snubbing
鈥?Single Package switch for bridge circuit applications
鈥?Compatible with high voltage Gate Driver IC's
鈥?Allows simpler gate drive
n-ch an nel
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聛
Clamped Inductive Load Current
聜
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
14
7.8
42
42
4.0
16
鹵 20
49
19
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
2 (0.07)
Max.
2.7
7.0
鈥撯€撯€?/div>
80
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
03/20/01
IRG4BC15UD 產(chǎn)品屬性
50
分離式半導(dǎo)體產(chǎn)品
IGBT - 單路
-
-
600V
2.4V @ 15V，7.8A
14A
49W
標(biāo)準(zhǔn)型
通孔
TO-220-3
TO-220AB
管件
*IRG4BC15UD
IRG4BC15UD相關(guān)型號PDF文件下載
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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