IRG4BC10S Datasheet

IC型號(hào)：
IRG4BC10S
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=6...
文件大?。?/label>
157.22KB
PDF頁(yè)數(shù)：
8頁(yè)
芯片廠家：
IRF

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PD - 91786A

IRG4BC10S

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?Extremely low voltage drop; 1.1V typical at 2A

鈥?S-Speed: Minimizes power dissipation at up to 3

KHz PWM frequency in inverter drives, up to 4

KHz in brushless DC drives, up to 2KHz in

Chopper Applications

鈥?Very Tight Vce(on) distribution

鈥?Industry standard TO-220AB package

Standard Speed IGBT

CES

= 600V

CE(on) typ.

= 1.10V

= 15V, I

= 2.0A

n-channel

Benefits

鈥?Generation 4 IGBTs offer highest efficiency

available

鈥?IGBTs optimized for specified application conditions

鈥?Lower conduction losses than many Power

MOSFET''s

TO-220AB

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector CurrentQ

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

Max.

600

8.0

鹵 20

110

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf鈥n (1.1 N鈥)

Units

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

0.5

鈥撯€撯€?/div>

2.0(0.07)

Max.

3.3

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

4/24/2000

標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時(shí)的最大Vce（開(kāi)）
1.8V @ 15V，8A
電流 - 集電極 (Ic)（最大）
14A
功率 - 最大
38W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件
其它名稱
*IRG4BC10S

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