PD -91734B
IRG4BC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?High short circuit rating optimized for motor control,
t
sc
=10碌s, @360V V
CE
(start), T
J
= 125擄C,
V
GE
= 15V
鈥?Combines low conduction losses with high
switching speed
鈥?Tighter parameter distribution and higher efficiency
than previous generations
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 2.39V
@V
GE
= 15V, I
C
= 5.0A
n-ch an nel
Benefits
鈥?Latest generation 4 IGBTs offer highest power density
motor controls possible
鈥?HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
9.0
5.0
18
18
4.0
16
10
鹵 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1 N鈥)
Units
V
A
碌s
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
2 (0.07)
Max.
3.3
7.0
鈥撯€撯€?/div>
80
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
4/24/2000
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