PD -93769
PROVISIONAL
IRG4BAC50W
C
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Designed expressly for switch-mode power
supply and PFC (power factor correction)
applications
鈥?Industry-benchmark switching losses improve
efficiency of all power supply topologies
鈥?50% reduction of E
off
parameter
鈥?Low IGBT conduction losses
鈥?Latest generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
V
CES
= 600V
G
E
V
CE(on) max.
= 2.30V
@V
GE
= 15V, I
C
= 27A
N-channel
Benefits
鈥?Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150kHz
("hard switched" mode)
鈥?Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
鈥?Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300kHz)
Super-220鈩?/div>
(TO-273AA)
Max.
600
55
27
220
220
鹵 20
170
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
聛
Clamped Inductive Load Current
聜
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
聝
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
V
A
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
TBD
Max.
0.64
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
1/19/2000
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
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