IRG41BC30UD Datasheet

IC型號(hào)：
IRG41BC30UD
PDF描述：
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8.9A I(C) | TO-...
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PD91753A

IRG4IBC30UD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

鈥?2.5kV, 60s insulation voltage

鈥?4.8 mm creapage distance to heatsink

鈥?UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

鈥?IGBT co-packaged with HEXFRED

ultrafast,

ultrasoft recovery antiparallel diodes

鈥?Tighter parameter distribution

鈥?Industry standard Isolated TO-220 Fullpak

outline

UltraFast CoPack IGBT

CES

= 600V

CE(on) typ.

= 1.95V

= 15V, I

= 12A

n-cha nn el

Benefits

鈥?Simplified assembly

鈥?Highest efficiency and power density

鈥?HEXFRED

antiparallel Diode minimizes

switching losses and EMI

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

@ T

= 100擄C

Visol

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector CurrentQ

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

RMS Isolation Voltage, Terminal to CaseU

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

Max.

600

8.9

8.5

2500

鹵 20

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf鈥n (1.1 N鈥)

Units

擄C

Thermal Resistance

Parameter

胃JC

胃JA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient, typical socket mount

Weight

Typ.

鈥撯€撯€?/div>

2.0 (0.07)

Max.

2.8

4.1

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

www.irf.com

7/17/2000

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